Sener Leads European SGAN Next Project to Develop High Frequency GaN Technology for Future Satellite Communications

SGAN-Next Run 1 wafer with MMICs for different tipologies of SSPAs in Q band, LNAs in V-band, RF Switch

(IN BRIEF) Sener is coordinating the SGAN-Next project, a Horizon Europe initiative focused on developing high-frequency gallium nitride-based electronic components for next-generation satellite communications. The project aims to produce more efficient, compact and reliable equipment suitable for satellites operating in both low Earth and geostationary orbits, particularly in the Q–V band. The international consortium includes leading European industrial and research organisations and seeks to establish a fully European supply chain for advanced space electronics. The project also aims to validate manufacturing processes for European space qualification and has already produced its first prototype wafer, supporting the development of future high-capacity satellite systems.

(PRESS RELEASE) MADRID, 24-Feb-2026 — /EuropaWire/ — Sener is leading SGAN-Next, a new European research initiative focused on developing next-generation space-qualified electronic equipment based on high-frequency gallium nitride (GaN) technology. The project aims to create advanced components capable of operating at very high frequencies, improving the performance of satellite antennas and communications systems. The resulting equipment is expected to be more efficient, compact and durable than current solutions, making it particularly suitable for satellites operating in low Earth orbit (LEO) and geostationary orbit (GEO), especially in the Q–V frequency band.

Supported by the European Commission through the Horizon Europe Space Research and Innovation programme, SGAN-Next is intended to strengthen Europe’s technological independence while supporting the development of a competitive and resilient European supply chain for space electronics.

The project focuses on electronic components based on gallium nitride technology on silicon carbide substrates. These materials enable improved energy efficiency, reduced system size and increased data transmission capacity for satellite communications. Such capabilities are essential for next-generation satellite missions requiring higher throughput and more compact payloads.

Sener coordinates an international consortium that brings together major industrial and academic partners, including United Monolithic Semiconductors, SweGaN, Airbus, the Ferdinand Braun Institute, the University of Bologna, the Autonomous University of Barcelona and Thales Alenia Space.

GaN-based electronics have increasingly become a key technology for space applications, particularly for advanced active antenna systems. Expanding GaN performance into higher frequency ranges is considered essential for supporting satellites with greater communication capacity and more efficient payload configurations, including applications in both civil and defence missions.

SGAN-Next will support the development of a new generation of European space electronics through the design of solid-state power amplifiers, low-noise amplifiers and high-frequency switching devices. These components are intended to deliver improved efficiency and reliability for future satellite platforms.

The project also includes activities aimed at validating the reliability of European manufacturing processes in order to achieve qualification by the European Space Components Coordination. Establishing a fully European production chain is a key objective of the initiative. As part of the development programme, the first wafer incorporating functional prototype devices has already been produced.

David Gala, Project Director for Aerospace and Defence at Sener, highlighted the strategic importance of the project, noting that the initiative reinforces Spain’s role within the European aerospace sector while supporting the development of high-frequency electronic equipment that enhances European technological autonomy and competitiveness.

SGAN-Next is funded under the Horizon Europe Space Research and Innovation programme through grant agreement No. 101082611.

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SOURCE: Sener Group