Infineon Technologies Predicts Gallium Nitride Will Revolutionize Energy Efficiency and Decarbonization Across Multiple Industries

Infineon Technologies Predicts Gallium Nitride Will Revolutionize Energy Efficiency and Decarbonization Across Multiple Industries

(IN BRIEF) Infineon Technologies highlights the transformative potential of gallium nitride (GaN) in driving energy efficiency and decarbonization across industries such as AI, home appliances, electric vehicles, and robotics. The company anticipates rapid growth in GaN adoption, supported by its continued investment in innovation, and is committed to advancing decarbonization and digitalization through the integration of GaN, Si, and SiC materials.

(PRESS RELEASE) MUNICH, 30-Jan-2025 — /EuropaWire/ — Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a global leader in semiconductor innovation, continues to drive progress in the fight against climate change and towards environmental sustainability. By harnessing the power of cutting-edge semiconductor materials, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), Infineon is playing a pivotal role in accelerating decarbonization and digitalization across various industries.

In its 2025 GaN predictions, Infineon emphasizes that gallium nitride is set to revolutionize energy efficiency and decarbonization efforts across sectors such as consumer electronics, mobility, residential solar, telecommunications, and AI data centers. GaN’s remarkable advantages include improved performance, smaller form factors, lighter weight, and lower overall costs, driving its widespread adoption. While USB-C chargers and adapters have led the charge, GaN is now poised to expand its reach, significantly boosting the market for GaN-based power semiconductors.

“Infineon is dedicated to advancing decarbonization and digitalization through continuous innovation with Si, SiC, and GaN,” said Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “The importance of integrated power systems will grow as GaN increasingly delivers improvements in efficiency, density, and compactness. With cost parity with silicon now within reach, we anticipate a rapid rise in GaN adoption in the years ahead.”

One of the most notable areas where GaN will have a profound impact is in the field of artificial intelligence (AI). As AI data centers experience explosive growth in computing power and energy demand, the need for advanced semiconductor solutions to handle the massive loads of AI servers becomes critical. Power supplies that once supported 3.3 kW are evolving to handle 5.5 kW, with future projections surpassing 12 kW per unit. GaN enables improved power density, which enhances the computational capacity within the constrained space of data center racks. Combining GaN with Si and SiC in hybrid configurations will provide the ideal balance of efficiency, power density, and cost, making it an optimal solution for AI workloads.

In the home appliance sector, GaN is expected to gain substantial momentum, driven by the demand for higher energy efficiency in devices like washing machines, dryers, refrigerators, and heat pumps. For example, in 800 W applications, GaN can enable a 2% efficiency gain, helping manufacturers meet stringent energy rating requirements. In electric vehicles (EVs), GaN-based on-board chargers and DC-DC converters are set to improve charging efficiency, power density, and material sustainability. As the shift moves towards 20 kW+ systems, GaN, in combination with SiC, will enhance traction inverters in both 400 V and 800 V EV systems, increasing driving range.

Looking ahead to 2025 and beyond, GaN is expected to make significant strides in robotics. The material’s ability to reduce size while maintaining performance will fuel growth in delivery drones, care robots, and humanoid robots. As AI-driven robotics technologies such as natural language processing and computer vision evolve, GaN will provide the necessary efficiency for compact, high-performance designs. By integrating inverters directly into the motor chassis, GaN reduces the need for external heatsinks and simplifies electromagnetic compatibility (EMC) design.

Infineon remains committed to investing heavily in GaN research and development to address challenges related to cost and scalability. With the broadest portfolio of products and intellectual property (IP), including innovations such as 300 mm GaN wafer manufacturing and bidirectional switch (BDS) transistors, Infineon continues to solidify its leadership role in driving decarbonization and digitalization through all key semiconductor materials, including GaN.

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 58,060 employees worldwide (end of September 2024) and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

Follow us:  X –  Facebook –  LinkedIn

Media Contact:

Michael Burner
Tel: +49 89 234 39300
Send E-mail

SOURCE: Infineon