(IN BRIEF) Infineon Technologies has unveiled its first radiation-hardened Gallium Nitride (GaN) transistors, designed for space applications and certified to the highest reliability standards by the United States Defense Logistics Agency (DLA). The GaN High Electron Mobility Transistor (HEMT) devices … Read the full press release →
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Tagged aerospace, Chris Opoczynski, CoolGaN™, Defense, DLA JANS certification, gallium nitride, GaN transistors, high reliability, Infineon Technologies, military-grade, Power Density, power transistors, radiation-hardened, semiconductor, space applications, space missions, space technology, Thermal Management