Infineon Unveils Next-Generation CoolSiC™ MOSFETs for Automotive Applications, Enabling Efficient Bi-Directional Charging

Infineon presents its new generation of 1200 V CoolSiC™ MOSFETs in TO263-7 for automotive applications, offering high power density and efficiency while reducing system costs. With improved switching performance and low on resistance, these MOSFETs enable smaller system sizes, increased power density, and reliable operation in extreme temperatures.

(IN BRIEF) Infineon has introduced its new generation of 1200 V CoolSiC™ MOSFETs in TO263-7 packaging for automotive applications. These silicon carbide (SiC) MOSFETs offer high power density, efficiency, and enable bi-directional charging. They also reduce system costs in on-board charging (OBC) and DC-DC applications. The new generation provides improved switching performance with 25% lower switching losses compared to the previous generation, allowing for higher-frequency operation and increased power density. Infineon’s advanced diffusion soldering chip mount technology enhances thermal capabilities, reducing the SiC MOSFET junction temperature by 25%. KOSTAL Automobil Elektrik has already integrated Infineon’s CoolSiC MOSFET into their next-generation OBC platform for Chinese OEMs, benefiting from improved performance and reliability.

(PRESS RELEASE) MUNICH, 13-Jun-2023 — /EuropaWire/ — Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a German semiconductor manufacturer, introduces its latest innovation, the new generation of 1200 V CoolSiC™ MOSFETs in TO263-7 packaging, specifically designed for automotive applications. The automotive-graded silicon carbide (SiC) MOSFETs offer exceptional power density and efficiency, enabling bi-directional charging and significantly reducing system costs in on-board charging (OBC) and DC-DC applications.

The 1200 V CoolSiC family member delivers industry-leading switching performance, exhibiting 25 percent lower switching losses compared to its predecessor. This notable improvement in switching behavior allows for high-frequency operation, resulting in compact system designs and increased power density. With a Gate-source threshold voltage (V GS(th)) greater than 4 V and an impressively low Crss/Ciss ratio, reliable turn-off at V GS = 0 V is achieved without the risk of parasitic turn-ons. This feature enables unipolar driving, leading to reduced system costs and simplified complexity. Additionally, the new generation boasts a low on-resistance (R DS(on)), reducing conductive losses across the entire temperature range of -55°C to 175°C.

Infineon’s advanced diffusion soldering chip mount technology (.XT technology) significantly enhances the thermal capabilities of the package, resulting in a 25 percent reduction in SiC MOSFET junction temperature compared to the first generation.

Furthermore, the MOSFET features a creepage distance of 5.89 mm, meeting the 800 V system requirements and reducing the need for extensive coating. To accommodate diverse application demands, Infineon offers a range of R DS(on) options, including the only 9 mΩ type currently available in the TO263-7 package.

KOSTAL Selects CoolSiC MOSFET for Next-Generation OBC Platform

Automotive charger systems supplier, KOSTAL Automobil Elektrik, has integrated Infineon’s latest CoolSiC MOSFET into their next-generation OBC platform for Chinese OEMs. KOSTAL is globally recognized for its standard platform approach, delivering safe, reliable, and highly efficient products that comply with various OEM requirements and global regulations.

With Infineon’s cutting-edge CoolSiC MOSFET technology, KOSTAL further enhances the performance and capabilities of their OBC platform, providing exceptional value and reliability to their customers.

“Decarbonization is the major challenge of this decade and thus a great motivation to shape car electrification with our customers. Therefore, we are very proud about the partnership with KOSTAL,” said Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon. “This project highlights the strong position of our standard product portfolio within the on-board charger market enabled by cutting-edge SiC technology.”

“As key component for our future generation OBC platform, Infineon’s new 1200 V CoolSiC Trench MOSFET features high voltage rating and qualified robustness. These benefits help us in to create a compatible design to manage our state-of-art technical solutions, cost optimization and massive market delivery,” said Shen Jianyu, Vice President, Technical Executive Manager at KOSTAL ASIA.


The 1200V CoolSiC™ MOSFET in TO263-7 package is available now.

More information is available at

Media contact:

Reinhard von Faltin
T +49 89 234 39694

SOURCE: Infineon Technologies AG


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