Infineon Launches Range of Discrete and Integrated GaN Devices for Industrial and Consumer Applications

The portfolio of CoolGaN discrete and integrated power stage (IPS) devices provides designers with the necessary flexibility to meet their specific needs for industrial applications complying with JEDEC standards (JESD47 and JESD22).

(IN BRIEF) Infineon Technologies AG has released its range of CoolGaN devices to the broader market, following the successful integration of the CoolGaN 600 V HD-GIT technology into its in-house manufacturing. The expanded GaN portfolio includes a wide range of discrete and fully integrated GaN devices that exceed JEDEC lifetime requirements. The devices are optimized for various applications ranging from industrial SMPS to consumer applications such as chargers, motor drives, TV/monitor, and LED lighting systems. The CoolGaN devices offer a unique combination of robust gate structure, internal ESD protection, and excellent dynamic R DS(on) performance. Infineon’s commitment to quality standards ensures unmatched robustness and long-term reliability, lowering operating and maintenance costs for high-energy consumption applications. The devices are in volume production, and samples can be ordered.

(PRESS RELEASE) MUNICH, 5-May-2023 — /EuropaWire/ —  Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a German semiconductor manufacturer, has announced the release of its complete portfolio of high-quality GaN devices to the broader market, following the successful integration of the CoolGaN™ 600 V HD-GIT technology into its in-house manufacturing. The expanded GaN portfolio includes a wide range of discrete and fully integrated GaN devices that far exceed JEDEC lifetime requirements. The new CoolGaN devices have been optimized for various applications ranging from industrial SMPS for servers, telecom, and solar to consumer applications such as chargers and adapters, motor drives, TV/monitor, and LED lighting systems.

The portfolio of CoolGaN discrete and integrated power stage (IPS) devices offers designers the flexibility to meet their specific needs for industrial applications complying with JEDEC standards. Infineon’s range of CoolGaN 600 V GIT discrete devices includes both top- and bottom-side cooled (TSC/BSC) JEDEC-compliant packages. CoolGaN TSC power packages are unique in the market and address higher power requirements. Infineon’s commitment to quality standards ensures unmatched robustness and long-term reliability, lowering operating and maintenance costs for high-energy consumption applications.

Infineon’s CoolGaN GIT technology features a unique combination of a robust gate structure, internal electrostatic discharge (ESD) protection, and excellent dynamic R DS(on) performance. It fully exploits the intrinsic properties of GaN to deliver exceptional figures of merit compared to Si technology, such as ten times higher breakdown field, two times higher electron mobility, ten times lower output charge, zero reverse recovery charge, and ten times lower gate charge with linear output capacitance.

Infineon’s CoolGaN devices are now in volume production, and samples can be ordered. The CoolGaN™ 600 V GIT HEMT portfolio will be showcased at PCIM Europe 2023. More information is available at www.infineon.com/coolgan.

Infineon at the PCIM 2023

At the PCIM Europe 2023 tradeshow, Infineon is showcasing innovative product-to-system solutions for applications that will power the world and shape the future. Company representatives will also be giving several presentations at the accompanying PCIM Conference and Industry & E-Mobility Forum with live and on-demand video presentations, followed by discussions with the speakers. “Driving decarbonization and digitalization. Together.” at the Infineon booth #412 in hall 7, 9-11 May, 2023 in Nuremberg/Germany. Information about the PCIM Europe 2023 show highlights is available at www.infineon.com/pcim.

Media contact:

Reinhard von Faltin
T +49 89 234 39694
Reinhard.vonFaltin@infineon.com

SOURCE: Infineon Technologies AG