Infineon Introduces CoolSiC MOSFETs for Enhanced Energy Efficiency in Power Applications

Infineon Introduces CoolSiC MOSFETs for Enhanced Energy Efficiency in Power Applications

(IN BRIEF) Infineon Technologies AG has introduced its silicon carbide (SiC) CoolSiC™ MOSFET 650 V in TO leadless (TOLL) packaging to address the growing demand for energy efficiency in the digitalization and electro-mobility era. These SiC MOSFETs are optimized for low losses, high reliability, and ease-of-use in applications such as servers, telecom infrastructure, energy storage systems, and battery formation solutions. The MOSFETs offer a compact form factor, high power density, and remarkable reliability even in harsh environments. They also feature innovative interconnect technology for improved thermal performance and compatibility with other SiC MOSFETs and standard MOSFET gate-driver ICs.

(PRESS RELEASE) MUNICH, 20-Jul-2023 — /EuropaWire/ — As digitalization, urbanization, and the rise of electro-mobility continue to shape the rapidly evolving world, the demand for power consumption is reaching unprecedented levels. Acknowledging energy efficiency as an important concern, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) addresses these megatrends with its silicon carbide (SiC) CoolSiC™ MOSFET 650 V in TO leadless (TOLL) packaging. The new SiC MOSFETs are enhancing Infineon’s comprehensive CoolSiC portfolio and are optimized for the lowest losses, the highest reliability, and ease-of-use in applications such as SMPS for servers, telecom infrastructure as well as energy storage systems and battery formation solutions.

The CoolSiC 650 V high-performance trench-based power SiC MOSFETs are offered in a very granular portfolio to best suit different target applications. The new family comes in a JEDEC-qualified TOLL package featuring a low parasitic inductance, allowing for higher switching frequency, reduced switching losses, good thermal management, and automated assembly. The compact form factor enables efficient and effective usage of the board space, empowering system designers to achieve exceptional power density.

The CoolSiC MOSFETs 650 V showcase remarkable reliability even in harsh environments, making them an ideal choice for topologies with repetitive hard commutation. The inclusion of the innovative .XT interconnect technology further enhances the devices’ thermal performance by reducing the thermal resistance (R th) and thermal impedance (Z th). In addition, the new devices feature a gate threshold voltage (V GS(th)) greater than 4 V for robustness against parasitic turn-on, a robust body diode, and the strongest gate oxide (GOX) in the market resulting in extremely low FIT (failures in time) rates.

While a cut-off voltage (V GS(off)) of 0 V is generally recommended to simplify the driving circuit (unipolar driving), the new portfolio supports a wide driving interval of V GS voltage within the range of -5 V (turn-off) to 23 V (turn-on). This ensures ease-of-use and compatibility with other SiC MOSFETs and standard MOSFET gate-driver ICs. This is paired with higher reliability, reduced system complexity, and the enablement of automated assembly, reducing system and production costs and accelerating time-to-market.

Availability

The new CoolSiC MOSFET 650 V in TOLL industrial-grade discretes are available in various drain-source on-resistance (R DS(on)) options from 22 to 83 mΩ and can be ordered now (107, 163 mΩ and 260 mΩ versions will be available on-demand). More information is available at www.infineon.com/coolsic-mosfet-discretes.

Media Contact:

Reinhard von Faltin
Tel: +49 89 234 39694
mailto: Reinhard.vonFaltin@infineon.com

SOURCE: Infineon Technologies AG